DataSheetWiki


BD139 fiches techniques PDF

Micro Commercial Components - (BD135 - BD139) Power Transistors NPN Silicon

Numéro de référence BD139
Description (BD135 - BD139) Power Transistors NPN Silicon
Fabricant Micro Commercial Components 
Logo Micro Commercial Components 





1 Page

No Preview Available !





BD139 fiche technique
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
BD135
BD137
BD139
)HDWXUHV
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
DC Current Gain - hFE = 40 (Min) @IC = 150mAdc
Complementary with BD136, BD138, BD140
0D[LPXP5DWLQJV
Rating
Collector-Emitter Voltage
BD135
BD137
BD139
Collector-Base Voltage
BD135
BD137
BD139
Emitter-Base Voltage
Collector Current
Base Current
:Total Device Dissipation @TA=25
:Derate above 25
:Total Device Dissipation @TC=25
:Derate above 25
Operating & Storage Temperature Range
Maximum Thermal Resistance Junction to
Case
Maximum Thermal Resistance Junction to
Ambient Air
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
PD
TJ, TSTG
R-&
R-$
Value
45
60
80
45
60
80
5.0
1.5
0.5
1.25
10
12.5
100
-55 to +150
10
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
:Watt
mW/
Watt
::mW/
:/Wwww.DataSheet.net/
:/W
Power Transistors
NPN Silicon
45,60,80 Volts

AK
N
D
E
B

1 23


L
G
M
(OHFWULFDO &KDUDFWHULVWLFV #  °& 8QOHVV 2WKHUZLVH 6SHFLILHG
Symbol
Parameter
Min Max Units
2)) &+$5$&7(5,67,&6
BVCEO
Collector-Emitter Sustaining Voltage*
(IC=30mA,IB=0) BD135
BD137
BD139
45
60
80
Vdc
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(on)
Collector Cutoff Current
:(VCB=30Vdc, IE=0)
(VCB=30Vdc, IE=0, TC=125 )
Emitter Cutoff Current
(VBE=5.0Vdc, IC=0)
DC Current Gain*
(IC=5mAdc, VCE=2Vdc)
(IC=0.5Adc, VCE=2Vdc)
(IC=150mAdc, VCE=2Vdc)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Base-Emitter ON Voltage
(VCE=2V, IC=0.5A)
0.1 µAdc
10
10 µAdc
25
25
40 250
0.5 Vdc
1 Vdc
CLASSIFICATION OF HFE(3)
Rank
6
Range
40-100
10
63-160
16
100-250
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
C
FQ










L
M
N
Q
J
PIN 1.
EMITTER
PIN 2.
COLLECTOR
PIN 3.
BASE
DIMENSIONS
 

0.291
0.417
0.602
4
0.118
0.026
0.046
 
0.307
0.433
0.618
1
0.126
0.034
0.054
0.090TYP
0.098
0.114
0.083
0.091
0.000
0.043
0.012
0.059
0.018
0.024


7.40
10.60
15.30
3.90
3.00
0.66
1.17
 
7.80
11.00
15.70
4.10
3.20
0.86
1.37
2.290TYP
2.50 2.90
2.10 2.30
0.00
1.10
0.30
1.50
0.45 0.60
 
www.mccsemi.com
Revision: A
1 of 3
2011/01/01
Datasheet pdf - http://www.DataSheet4U.co.kr/

PagesPages 3
Télécharger [ BD139 ]


Fiche technique recommandé

No Description détaillée Fabricant
BD130 NPN Silicon Transistor Comset Semiconductors
Comset Semiconductors
BD130 NPN Silicon Power Solitron Devices
Solitron Devices
BD13003B NPN Plastic Encapsulated Transistor SeCoS
SeCoS
BD131 NPN power transistor NXP Semiconductors
NXP Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche