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BD131 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Comset Semiconductors - SILICON PLANAR EPITAXIAL POWER TRANSISTORS

شماره قطعه BD131
شرح مفصل SILICON PLANAR EPITAXIAL POWER TRANSISTORS
تولید کننده Comset Semiconductors 
آرم Comset Semiconductors 


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BD131 شرح
NPN BD131
SILICON PLANAR EPITAXIAL POWER TRANSISTORS
The BD131are NPN transistors mounted in Jedec TO-126 plastic package.
Medium power applications.
PNP complements are BD132
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
IB
PT
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Reverse base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Value
45
45
4
IC
ICM
IBM
www.DataSheet.net/
IBM
@ Tmb = 60°C
3
6
0.5
0.5
15
150
-65 to +150
Unit
V
V
V
A
A
W
°C
°C
Symbol
Ratings
RthJ-mb Thermal Resistance, Junction to mouting base
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
IEBO
VCE(SAT)
VBE(SAT)
hFE
Collector cut-off current
IE=0 , VCB=40 V
IE=0 , VCB=40 V ,Tj= 150°C
Emitter cut-offcurrent
IC=0, VEB=3 V
Collector-Emitter saturation IC=0.5 A, IB=50 mA
Voltage
IC=2.0 A, IB=200 mA
Base-Emitter saturation IC=0.5 A, IB=50 mA
Voltage
IC=2.0 A, IB=200 mA
DC Current Gain
VCE=12 V, IC=500m A
VCE=1 V, IC=2 A
Value
6
Unit
K/W
Min Typ Max Unit
-
-
-
-
5
500
µA
- - 5 µA
-
-
-
-
0.3
1.2
V
-
-
-
-
0.7
1,5
V
40 -
-
20 -
-
18/10/2012
COMSET SEMICONDUCTORS
1|2
Datasheet pdf - http://www.DataSheet4U.co.kr/

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