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PDF 2N6166 Data sheet ( Hoja de datos )
| Número de pieza | 2N6166 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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2N6166
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N6166 is Designed to
operate in a collector modulated VHF
Power Amplifier Applications up to 200
MHz.
FEATURES:
• ηC = 60 % min. @ 100 W/150 MHz
• PG = 6.0 dB min. @ 100 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 9.0 A
VCBO
65 V
VEBO
4.0 V
PDISS
117 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 1.5 °C/W
PACKAGE STYLE .500 4L FLG
FULL R
A
E
.112x45°
L
C
Ø.125 NOM.
C
B
B
E
E
H
D
G
F
K
IJ
DIM MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
.255 / 6.48
D .720 / 18.28
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
.505 / 12.83
H .003 / 0.08
.007 / 0.18
I .090 / 2.29
.110 / 2.79
J .150 / 3.81
.175 / 4.45
K .280 / 7.11
L .980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10790
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCES
IC = 200 mA
BVCEO
IC = 200 mA
BVEBO
IE = 10 Ma
ICES VCE = 30 V
ICBO
VCB = 30 V
hFE VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
65
35
4.0
5.0
30
5.0
UNITS
V
V
V
mA
mA
---
COB
VCE = 28 V
f = 1.0 MHz
130 pF
PG 6.0
ηC
VCC = 28 V
POUT = 100 W
f = 150 MHz
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N6166.PDF ] | |
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