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PDF 2N5672 Data sheet ( Hoja de datos )
| Número de pieza | 2N5672 | |
| Descripción | (2N5671 / 2N5672) NPN HIGH POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5672 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488
Devices
2N5671
2N5672
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 34.2 mW/0C for TA > +250C
2) Derate linearly 800 mW/0C for TC > +250C
Symbol 2N5671 2N5672
VCEO
VCBO
VEBO
IB
90 120
120 150
7.0
10
IC
PT
www.DataSheet.net/
30
6.0
140
Top, Tstg
-65 to +200
Symbol
RθJC
Max.
1.25
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CEX
Collector-Emitter Cutoff Current
VCE = 80 Vdc
Collector-Emitter Cutoff Current
ICEO
VCE = 110 Vdc, VBE = 1.5 Vdc
VCE = 135 Vdc, VBE = 1.5 Vdc
2N5671
2N5672
ICEX
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
90 Vdc
120
110 Vdc
140
120 Vdc
150
10 mAdc
12 mAdc
10
120101
Page 1 of 2
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N5672.PDF ] | |
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