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2N5415 fiches techniques PDF

Comset Semiconductors - (2N5415 / 2N5416) HIGH VOLTAGE Transistors

Numéro de référence 2N5415
Description (2N5415 / 2N5416) HIGH VOLTAGE Transistors
Fabricant Comset Semiconductors 
Logo Comset Semiconductors 





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2N5415 fiche technique
PNP 2N5415 – 2N5416
HIGH VOLTAGE TRANSISTORS
The 2N5415 and 2N5416 are PNP transistors mounted in TO-39 metal case .
They are intended for use in high-voltage switching and linear amplifier applications.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (Ib = 0)
VCBO
Collector-Base Voltage (Ie = 0)
VEBO
Emitter-Base Voltage (Ic = 0)
IC Collector Current
ICM Peak Collector Current
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IBM Peak Base Current
PD Total Power Dissipation
Tamb = 50°C
Tcase = 25°C
TJ Junction Temperature
TStg Storage Temperature Range
Tamb
Operating Ambient Temperature
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
Value
-200
-300
-200
-350
-4
-6
-200
-400
-200
1
10
200
-65 to +200
-65 to +150
Unit
V
V
V
mA
mA
mA
W
°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to ambient
RthJ-c
Thermal Resistance, Junction to case
Value
150
17.5
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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