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Numéro de référence | 2N5323 | ||
Description | (2N5322 / 2N5323) Silicon Planar Epitaxial Transistors | ||
Fabricant | Comset Semiconductor | ||
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1 Page
PNP 2N5322 – 2N5323
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case .
They are especially intended for high-voltage medium power applications in industrial and
commercial equipements.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VCEV
VEBO
IC
IB
PD
TJ
TStg
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = 1.5V)
www.DataSheet.net/
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
@ Tamb = 25°
@ Tcase= 25°
Storage Temperature range
Value
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
-75
-50
-100
-75
-100
-75
-6
-5
-2
-1
1
10
-65 to +200
-65 to +200
Unit
V
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
175
17.5
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Pages | Pages 3 | ||
Télécharger | [ 2N5323 ] |
No | Description détaillée | Fabricant |
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