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2N3790 fiches techniques PDF

Comset Semiconductor - (2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORS

Numéro de référence 2N3790
Description (2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORS
Fabricant Comset Semiconductor 
Logo Comset Semiconductor 





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2N3790 fiche technique
PNP 2N3789 – 2N3790 – 2N3791 – 2N3792
EPITAXIAL-BASE TRANSISTORS
The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in
Jedec TO-3 metal case. They are inteded for use in power linear and switching applications.
The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NPN types are respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-BaseVoltage IE = 0
VCEO
VEBO
IC
IB
PD
TJ
TS
Collector-Emitter
Voltage
IB = 0
www.DataSheet.net/
Emitter-Base Voltage
Collector Current
Base Current
IC = 0
Total Device Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
Thermal Resistance, Junction to Case (Max)
2N3789
2N3791
2N3790
2N3792
2N3789
2N3791
2N3790
2N3792
Value
-80
-100
-60
-80
-7
-10
-4
150
-65 to +200
Unit
V
V
V
A
A
W
°C
Value
1.17
Unit
°C/W
05/11/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/

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