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PDF 2N3637 Data sheet ( Hoja de datos )
| Número de pieza | 2N3637 | |
| Descripción | (2N3636 / 2N3637) Silicon Planar RF Transistors | |
| Fabricantes | Comset Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3637 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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PNP 2N3636 – 2N3637
SILICON PLANAR RF TRANSISTORS
The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case.
They are intended for high voltage switching and Low Power Amplifier.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (Ib = 0)
VCBO
Collector-Base Voltage (Ie = 0)
VEBO
Emitter-Base Voltage (Ic = 0)
IC Collector Current
PD Total Power Dissipation
TJ
TStg
Tamb
Junction Temperature
Storage Temperature Range
Operating Ambient Temperature
www.DataSheet.net/
Tamb = 25°C
Tcase = 25°C
Value
-175
-175
-5
-1
1
5
200
-65 to +200
-65 to +150
Unit
V
V
V
A
W
°C
°C
°C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
Collector Cutoff
Current
Test Condition(s)
VCB = -100 V, IE =0
IEBO Emitter Cutoff Current VEB = -3 V, IC =0
VCEO
VCBO
VEBO
Collector Emitter
Breakdown Voltage (*)
Collector Base
Breakdown Voltage
Emitter Base
Breakdown Voltage
IC = -10 mA, IB =0
IC = -100 µA, IE =0
IE = -10 mA, IC =0
21/09/2012
COMSET SEMICONDUCTORS
Min Typ Max Unit
- - -100 nA
- - -50 nA
-175 - - V
-175 - - V
-5 - - V
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3637.PDF ] | |
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