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PDF 2N3583 Data sheet ( Hoja de datos )
| Número de pieza | 2N3583 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3583
DESCRIPTION
·Contunuous Collector Current-IC= 1A
·Power Dissipation-PD=35W @TC= 25℃
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0 V(Max)@ IC = 1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250 V
VCEO
Collector-Emitter Voltage
175 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
1.0
www.DataSheet.net/
A
ICM Collector Current-Peak
5.0 A
IBB Base Current
1.0 A
PC Collector Power Dissipation@TC=25℃ 35
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0 ℃/W
isc Website：www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3583.PDF ] | |
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