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Numéro de référence | 2N3442 | ||
Description | Silicon NPN Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3442
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
APPLICATIONS
·For industrial and commercial equipment
including high fidelity audio amplifiers,
series and shunt regulators and power
switches applications
PINNING
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
www.DataSheet.net/
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R(th) jc
Thermal resistance junction to case
VALUE
160
140
7
10
15
117
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
VALUE
1.5
UNIT
℃/W
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Pages | Pages 3 | ||
Télécharger | [ 2N3442 ] |
No | Description détaillée | Fabricant |
2N3440 | SILICON NPN TRANSISTORS | STMicroelectronics |
2N3440 | HIGH VOLTAGE NPN TRANSISTORS | Seme LAB |
2N3440 | HIGH VOLTAGE AMPLIFIERS | Boca Semiconductor Corporation |
2N3440 | NPN LOW POWER SILICON TRANSISTOR | Microsemi Corporation |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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