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2N3019 fiches techniques PDF

Comset Semiconductor - (2N3019 / 2N3020) SILICON PLANAR EPITAXIAL TRANSISTORS

Numéro de référence 2N3019
Description (2N3019 / 2N3020) SILICON PLANAR EPITAXIAL TRANSISTORS
Fabricant Comset Semiconductor 
Logo Comset Semiconductor 





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2N3019 fiche technique
NPN 2N3019 – 2N3020
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case .
They are intended for high-current, high-frequency amplifier applications.
They feature high gain and low saturation voltages.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
www.DataSheet.net/
@ Tamb = 25°
@ Tcase= 25°
Storage Temperature range
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
Value
80
Unit
V
140 V
7V
1A
0.8
Watts
5
200 °C
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol
RthJ-a
RthJ-c
Ratings
Thermal Resistance, Junction to ambient in
free air
Thermal Resistance, Junction to case
2N3019
2N3020
2N3019
2N3020
Value
35
219
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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