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2N1893 fiches techniques PDF

Comset Semiconductor - Medium Power Transistor

Numéro de référence 2N1893
Description Medium Power Transistor
Fabricant Comset Semiconductor 
Logo Comset Semiconductor 





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2N1893 fiche technique
NPN 2N1893
MEDIUM POWER TRANSISTOR
The 2N1893 are NPN transistors mounted in TO-39 metal package.
They are intended for use in high performance amplifier, oscillator and switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VCER
VEBO
IC
ICM
IBM
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (RBE = 10 )
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
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PD Total Power Dissipation
TJ
TStg
Tamb
Junction Temperature
Storage Temperature range
operating ambient temperature
Value
Tamb= 25°C
Tcase= 25°C
Tcase= 100°C
80
120
100
7
0.5
1
0.2
0.8
3
1.7
200
-65 to +150
-65 to +150
Unit
V
V
V
V
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
Rthj-a
Thermal Resistance, Junction-case
thermal resistance from junction to ambient in free air
Value
58.3
219
Unit
°C/ W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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