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2N1613 fiches techniques PDF

Comset Semiconductor - (2N1613 / 2N1711) Silicon Planar Epitaxial Transistors

Numéro de référence 2N1613
Description (2N1613 / 2N1711) Silicon Planar Epitaxial Transistors
Fabricant Comset Semiconductor 
Logo Comset Semiconductor 





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2N1613 fiche technique
NPN 2N1613 – 2N1711
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector
connected to the case .
They are designed for use in high-performance amplifier, oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
VCER
VEBO
IC
ICM
IBM
Collector-Base Voltage
Collector-Emitter Voltage (RBE = 10)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
www.DataSheet.net/
PD Total Power Dissipation
TJ Junction Temperature
TStg Storage Temperature range
@ Tcase= 25°
@ Tcase= 100°
@ Tamb= 25°
Value
75
50
7
5
1
200
3
1.7
0.8
200
-65 to +150
Unit
V
V
V
mA
A
mA
W
W
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
RthJ-amb
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
Value
58
219
Unit
°C/ W
°C/ W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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