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Numéro de référence | 2N6073A | ||
Description | Sensitive Gate Triacs | ||
Fabricant | ETC | ||
Logo | |||
1 Page
2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
**Peak Repetitive Off-State Voltage(1)
(TJ = 40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
VDRM,
VRRM
200
400
600
Unit
Volts
*On-State RMS Current (TC = 85°C) IT(RMS) 4.0 Amps
Full Cycle Sine Wave 50 to 60 Hz
*Peak Non–repetitive Surge Current
(One Full cycle, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
30 Amps
3.7 A2s
*Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 85°C)
*Average Gate Power
(t = 8.3 ms, TC = 85°C)
*Peak Gate Voltage
(Pulse Width ≤ 1.0 µs, TC = 85°C)
*Operating Junction Temperature Range
PGM
PG(AV)
VGM
TJ
10
0.5
5.0
–40 to
+110
Watts
Watt
Volts
°C
*Storage Temperature Range
Tstg
–40 to
°C
+150
Mounting Torque (6-32 Screw)(2)
— 8.0 in. lb.
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
http://onsemi.com
TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
MT2
MT1
G
3
21
TO–225AA
(formerly TO–126)
CASE 077
STYLE 5
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
ORDERING INFORMATION
Device
2N6071A
2N6071B
Package
TO225AA
TO225AA
Shipping
500/Box
500/Box
2N6073A
TO225AA
500/Box
2N6073B
2N6075A
2N6075B
TO225AA
TO225AA
TO225AA
500/Box
500/Box
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
2N6071/D
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Pages | Pages 8 | ||
Télécharger | [ 2N6073A ] |
No | Description détaillée | Fabricant |
2N6073 | SENSITIVE GATE TRIACS | Digitron Semiconductors |
2N6073A | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS | Motorola Inc |
2N6073A | Sensitive Gate Triacs | ON Semiconductor |
2N6073A | Sensitive Gate Triacs | ETC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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