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PDF 2N6073A Data sheet ( Hoja de datos )
| Número de pieza | 2N6073A | |
| Descripción | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Order this document
by 2N6071/D
2N6071A,B*
2N6073A,B*
2N6075A,B*
*Motorola preferred devices
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
MT1
MT2 G
MT2
G
MT2 MT1
CASE 77-08
(TO-225AA)
STYLE 5
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = 25 to 110°C)
2N6071A,B
2N6073A,B
2N6075A,B
Symbol
VDRM
Value
200
400
600
Unit
Volts
*On-State Current RMS (TC = 85°C)
*Peak Surge Current
(One Full cycle, 60 Hz, TJ = –40 to +110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
IT(RMS)
ITSM
I2t
4
30
3.7
Amps
Amps
A2s
*Peak Gate Power
PGM
10 Watts
*Average Gate Power
PG(AV)
0.5
Watt
*Peak Gate Voltage
VGM 5 Volts
*Indicates JEDEC Registered Data.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1998
1
1 page  
FIGURE 7 – MAXIMUM ON-STATE CHARACTERISTICS
40
30
20
3.0
2.0
2N6071A,B 2N6073A,B 2N6075A,B
FIGURE 8 – TYPICAL HOLDING CURRENT
GATE OPEN
APPLIES TO EITHER DIRECTION
10
7.0
5.0
TJ = 110°C
3.0
2.0
1.0
0.7
0.5
0.3
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
FIGURE 9 – MAXIMUM ALLOWABLE SURGE CURRENT
1.0 34
32
0.7
30
0.5 28
26
0.3 24
22 TJ = –40 to +110°C
f = 60 Hz
0.2 20
18
16
0.1 14
0 1.0 2.0 3.0 4.0 5.0 1.0
2.0
3.0 4.0 5.0
7.0 10
VTM, ON-STATE VOLTAGE (VOLTS)
NUMBER OF FULL CYCLES
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.1
0.2
0.5 1.0 2.0
FIGURE 10 – THERMAL RESPONSE
5.0 10
20 50
t, TIME (ms)
100 200
MAXIMUM
TYPICAL
500 1.0 k 2.0 k
5.0 k 10 k
Motorola Thyristor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N6073A.PDF ] | |
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