DataSheetWiki


2N6071B fiches techniques PDF

Motorola Inc - TRIACs 4 AMPERES RMS 200 thru 600 VOLTS

Numéro de référence 2N6071B
Description TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
Fabricant Motorola Inc 
Logo Motorola  Inc 





1 Page

No Preview Available !





2N6071B fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions
Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Order this document
by 2N6071/D
2N6071A,B*
2N6073A,B*
2N6075A,B*
*Motorola preferred devices
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
MT1
MT2 G
MT2
G
MT2 MT1
CASE 77-08
(TO-225AA)
STYLE 5
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = 25 to 110°C)
2N6071A,B
2N6073A,B
2N6075A,B
Symbol
VDRM
Value
200
400
600
Unit
Volts
*On-State Current RMS (TC = 85°C)
*Peak Surge Current
(One Full cycle, 60 Hz, TJ = –40 to +110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
IT(RMS)
ITSM
I2t
4
30
3.7
Amps
Amps
A2s
*Peak Gate Power
PGM
10 Watts
*Average Gate Power
PG(AV)
0.5
Watt
*Peak Gate Voltage
VGM 5 Volts
*Indicates JEDEC Registered Data.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1998
1

PagesPages 6
Télécharger [ 2N6071B ]


Fiche technique recommandé

No Description détaillée Fabricant
2N6071 TRIACs 4 AMPERES RMS 200 thru 600 VOLTS Motorola  Inc
Motorola Inc
2N6071 SENSITIVE GATE TRIACS Digitron Semiconductors
Digitron Semiconductors
2N6071A Sensitive Gate Triacs ON Semiconductor
ON Semiconductor
2N6071A TRIACs 4 AMPERES RMS 200 thru 600 VOLTS Motorola  Inc
Motorola Inc

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche