DataSheetWiki


13N10 fiches techniques PDF

Fairchild Semiconductor - FQB13N10

Numéro de référence 13N10
Description FQB13N10
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





1 Page

No Preview Available !





13N10 fiche technique
FQB13N10 / FQI13N10
100V N-Channel MOSFET
January 2001
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and
DC motor control.
Features
• 12.8A, 100V, RDS(on) = 0.18@VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings www.DataSheet.net/
TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
D
!
"
!"
G!
"
"
!
S
FQB13N10 / FQI13N10
100
12.8
9.05
51.2
± 25
95
12.8
6.5
6.0
3.75
65
0.43
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 2.31 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
Datasheet pdf - http://www.DataSheet4U.co.kr/

PagesPages 9
Télécharger [ 13N10 ]


Fiche technique recommandé

No Description détaillée Fabricant
13N10 FQB13N10 Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche