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PDF 2N60Z Data sheet ( Hoja de datos )

Número de pieza 2N60Z
Descripción 600V N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! 2N60Z Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
2N60Z
2A, 600V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 2N60Z is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
„ FEATURES
* RDS(ON) = 5@VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
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Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N60ZL-TF3-T
2N60ZG-TF3-T
2N60ZL-TM3-T
2N60ZG-TM3-T
2N60ZL-TN3-T
2N60ZG-TN3-T
2N60ZL-TN3-R
2N60ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-829.B
Datasheet pdf - http://www.DataSheet4U.co.kr/

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2N60Z pdf
2N60Z
„ TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
Gate Charge Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG
QGD
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Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-829.B
Datasheet pdf - http://www.DataSheet4U.co.kr/

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