|
|
Número de pieza | 2N5952 | |
Descripción | N-Channel RF Ampifier | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N5952 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! 2N5952
N-Channel RF Ampifier
• This device is designed primarily for electronic switching applications
such as low on resistance analog switching.
• Sourced from process 50.
1 TO-92
Absolute Maximum Ratings * TC=25°C unless otherwise noted
1. Gate 2. Source 3. Drain
Symbol
Parameter
Value
Units
VDG Drain-Gate Voltage
30
VGS Gate-Source Voltage
-30
IGF Forward Gate Current
10
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
VGS(off) Gate-Source Cutoff Voltage
On Characteristics
VDS = 0, IG = -1.0µA
VGS = -15V, VDS = 0
VDS = 15V, ID = 100nA
IDSS
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
VDS = 15V, VGS = 0
gfs Forward Transfer Conductance
gos Output Conductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
NF Noise Figure
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 1.0%
VDS = 15V, VGS = 0, f = 1.0kHz
VDS = 15V, VGS = 0, f = 100MHz
VDS = 15V, VGS = 0, f = 1.0MHz
VDS = 15V, VGS = 0, f = 1.0MHz
VDS = 15V, RG = 1.0kΩ,
f = 1.0kHz
Min. Typ. Max. Units
-30 V
-1.0 nA
-1.3 -3.5 V
4.0 8.0 mA
2000
6500
75
6.0
2.0
2.0
µmhos
µmhos
pF
pF
dB
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2N5952.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N5950 | SFET RF/VHF/ UHF/ Amplitiers | Fairchild Semiconductor |
2N5950 | N-Channel JFET | Taitron Components |
2N5951 | SFET RF/VHF/ UHF/ Amplitiers | Fairchild Semiconductor |
2N5951 | N-Channel JFET | Taitron Components |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |