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PDF RF3826 Data sheet ( Hoja de datos )
| Número de pieza | RF3826 | |
| Descripción | 9W GaN WIDEBAND | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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1. RF3826  Hay una vista previa y un enlace de descarga de RF3826 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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RF3826
30MHz to
2500MHz, 9W
GaN Wide-
band Power
Amplifier
RF3826
30MHz TO 2500MHz, 9W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
Advanced GaN HEMT Technology
Output Power of 9W
Advanced Heat-Sink Technology
30MHz to 2500MHz
Instantaneous Bandwidth
Input Internally Matched to 50
28V Operation Typical
Performance
POUT 39.5dBm
Gain 12dB
Power Added Efficiency 45%
(30MHz to 2500MHz)
Power Added Efficiency 50%
(200MHz to 1800MHz)
-40°C to 85°C Operating
Temperature
Large Signal Models Available
Applications
Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure
General Purpose Tx Amplification
Test and Instrumentation
Civilian and Military Radar
VGS
Pin 1
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
GND
BASE
Functional Block Diagram
Product Description
www.DataSheet.net/
The RF3826 is a wideband Power Amplifier designed for CW and pulsed applica-
tions such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high efficiency, flat
gain and large instantaneous bandwidth in a single amplifier design. The RF3826
is an input matched GaN transistor packaged in an air cavity ceramic package
which provides excellent thermal stability through the use of advanced heat sink
and power dissipation technologies. Ease of integration is accomplished through
the incorporation of optimized input matching network within the package that pro-
vides wideband gain and power performance in a single amplifier. An external out-
put match offers the flexibility of further optimizing power and efficiency for any
sub-band within the overall bandwidth.
DS120418
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 15
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
RF3826
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to
2500MHz (T = 25°C, unless noted)
Gain versus Frequency
(CW, VD = 28V, IDQ = 55mA)
15
Power Added Efficiency versus Frequency
(CW, VD = 28V, IDQ = 55mA)
60
50
12
40
9
30
6 PPOoUuTt =39dBm
20 PPOoUuTt =35dBm
POoUuTt =39dBm
PPOoUuTt =25dBm
3
POoUuTt =35dBm
10
POoUuTt =25dBm
00
Frequency (MHz)
Frequency (MHz)
Input Return Loss versus Frequency
(CW, VD = 28V, IDQ = 55mA)
0
PoOuUTt =39dBm
PoOuUTt =35dBm
Ͳ5 PoOuUTt =25dBm
Ͳ10
Ͳ15
Ͳ20
Ͳ25
Frequency (MHz)
14
13
www.DataSheet.net/
12
11
10
9
25
Gain versus Output Power
(CW, VD = 28V, IDQ = 55mA)
freq=50MHz
freq=1200MHz
freq=2000MHz
28 31 34 37
POUT, Output Power (dBm)
40
60
50
40
30
20
10
0
25
Power Added Efficiency versus Output Power
(CW, VD = 28V, IDQ = 55mA)
freq=50MHz
freq=1200MHz
freq=2000MHz
28 31 34 37
POUT, Output Power (dBm)
40
0
Ͳ5
Ͳ10
Ͳ15
Ͳ20
Ͳ25
25
Input Return Loss versus Output Power
(CW, VD = 28V, IDQ = 55mA)
freq=50MHz
freq=1200MHz
freq=2000MHz
28 31 34 37
POUT, Output Power (dBm)
40
DS120418
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 15
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
RF3826
Bias Instruction for RF3826 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connection RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -5V to VG.
4. Apply 28V to VD.
5. Increase VG until drain current reaches 55mA or desired bias point.
6. Turn on the RF input.
Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias
network mismatch and losses.
www.DataSheet.net/
DS120418
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 15
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet RF3826.PDF ] | |
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