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PDF 2N5832 Data sheet ( Hoja de datos )
| Número de pieza | 2N5832 | |
| Descripción | NPN Transistor Plastic-case Bipolar | |
| Fabricantes | Micro Commercial Components | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5832 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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MCC
Features
• Through Hole Package
omponents
21201 Itasca Street Chatsworth
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Pin Configuration
Bottom View
CB E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown Voltage
(IC=300mAdc)
Collector-Base Breakdown Voltage
140
160
Vdc
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
5.0
Vdc
ICBO Collector-Base Breakdown Current
(VCE=120Vdc)
50 nAdc
ON CHARACTERISTICS
hFE DC Current Gain*
VCE(sat)
(IC=10mAdc, VCE=5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc)
175 500
0.2 Vdc
2N5832
Plastic-case Bipolar
NPN Transistor
TO-92
A
E
B
C
D
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=10mAdc)
Cob Output Capacitance
NF Noise Figure
Note: Maximum at typical JEDEC condition
V(BR)CER @ R=10 OHMS
100 MHz
4.0 pF
---- dB
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .175 .185
B .175 .185
C .500
---
D .016 .020
E .135 .145
G .095 .105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N5832.PDF ] | |
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