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Numéro de référence | 2N5830 | ||
Description | NPN General Purpose Amplifier | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
2N5830
Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for general purpose high
voltage amplifiers and gas discharge display driving. Sourced
from Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
100
VCBO
Collector-Base Voltage
120
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N5830
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
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Pages | Pages 2 | ||
Télécharger | [ 2N5830 ] |
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