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PDF AD9254S Data sheet ( Hoja de datos )
| Número de pieza | AD9254S | |
| Descripción | 1.8V ANALOG-TO-DIGITAL CONVERTER | |
| Fabricantes | Analog Devices | |
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This specification documents the detail requirements for space qualified product manufactured on Analog
Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.
The manufacturing flow described in the STANDARD SPACE LEVEL PRODUCTS PROGRAM brochure is to be
considered a part of this specification. http://www.analog.com/aeroinfo
This data sheet specifically details the space grade version of this product. A more detailed operational
description and a complete data sheet for commercial product grades can be found at www.analog.com/AD9254.
Part Number
AD9254R703F
Description
Radiation tested to 100K, 1.8V, 14-Bit, 150MSPS Bipolar Ain Range
A/D Converter
The case outline(s) are as designated in MIL-STD-1835 with package dimensions listed in Section 8 and as
follows:
Outline letter
F
Descriptive designator
CQCC-F52C
Terminals Lead Finish
52 lead Gold
Package style
Quad Flatpack
1 page  
Aperture Delay.......................................................................................................................................0.8 ns
Aperture Uncertainty (Jitter)............................................................................................................0.1 ps rms
Wake-Up Time......................................................................................................................................350 µs
Out of Range Recovery Time............................................................................................................3 Cycles
NOTES
1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure
to absolute maximum ratings for extended periods may affect device reliability.
2/Maximum power dissipation is specified so that TJ does not exceed +125°C with TA = +110°C where exposed paddle is soldered to ground.
3/ Measurement taken under absolute worst case condition of still air. Soldering the package exposed paddle to AGND of the customer PCB is required
for electrical and thermal performance of the product.
4/ TA = +25C, unless otherwise noted, AVDD = 1.8 V; DRVDD = 2.5 V, maximum sample rate, 2 V p-p differential input, 1.0 V internal reference; AIN =
−1.0 dBFS, DCS enabled. See commercial datasheet for details on Ain options, reference and timing modes and diagrams, and other product
application details.
5/ Input capacitance refers to the effective capacitance between one differential input pin and AGND.
5 Page 
Table IIA Notes:
1/ PDA apply to subgroup 1 only. Delta's are not excluded from PDA.
2/ See Table IIB for delta parameters.
3/ Parameters marked with note 3/ in Table I are part of device initial characterization which is only repeated after design and
process changes or with subsequent wafer lots.
The test conditions and circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 test condition D of MIL-STD-883. Burn-in is performed at TJ ≥ +125°C.
HTRB is not applicable for this drawing.
The radiation exposure circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing and acquiring activity upon request. Total dose irradiation testing
shall be performed in accordance with MIL-STD-883 method 1019, condition A.
Wafer fabrication occurs at a MIL-PRF-38535 QML Class Q certified facility.
Full WLA per MIL-STD-883 TM 5007 is not available for this product. SEM inspection per MIL-STD-883
TM2018 is not applicable to the AD9254. The wafer fabrication process is manufactured using planarized
metallization.
Final test temperature range is -55°C – 110°C. No testing at +125°C.
240 hour Burn-in and 1000 hour Group C Life test performed at TJ ≥ 125°C (TA = +110°C).
11 Page | ||
| Páginas | Total 27 Páginas | |
| PDF Descargar | [ Datasheet AD9254S.PDF ] | |
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