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Microsemi Corporation - PNP DUAL SILICON TRANSISTOR

Numéro de référence 2N5796
Description PNP DUAL SILICON TRANSISTOR
Fabricant Microsemi Corporation 
Logo Microsemi Corporation 





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2N5796 fiche technique
PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496
Devices
2N5795
2N5796
2N5796U
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Total Power Dissipation
@ TA = +250C
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/0C for TA +250C
2) Derate linearly 3.43 mW/0C for TA +250C
PT
TJ, Tstg
Value
60
60
5.0
600
One(1)
Both(2)
Section Sections
0.5 0.6
-65 to +175
Units
Vdc
Vdc
Vdc
mAdc
W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
V(BR)CEO
VCB = 50 Vdc
VCBO = 60 Vdc
Emitter-Base Cutoff Current
ICBO
VEB = 3.0 Vdc
VEB = 5.0 Vdc
IEBO
Min.
60
TO-78*
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/496 for
package outline
Max.
Unit
Vdc
10 ηAdc
10 µAdc
100 ηAdc
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
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