DataSheetWiki


2N5783 fiches techniques PDF

Central Semiconductor Corp - COMPLEMENTATY SILICON POWER TRANSISTOR

Numéro de référence 2N5783
Description COMPLEMENTATY SILICON POWER TRANSISTOR
Fabricant Central Semiconductor Corp 
Logo Central Semiconductor Corp 





1 Page

No Preview Available !





2N5783 fiche technique
2N5783 PNP
2N5786 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5783 and
2N5786 types are Complementary Silicon Power
Transistors designed for general purpose switching and
amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
ΘJC
ΘJA
45
45
40
3.5
3.5
1.0
10
1.0
-65 to +200
17.5
175
UNITS
V
V
V
V
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=45V, VBE=1.5V
ICEV
VCE=45V, VBE=1.5V, TC=150°C
ICER
VCE=40V, RBE=100Ω
ICER
VCE=40V, RBE=100Ω, TC=150°C
ICEO
VCE=25V
IEBO
VEB=3.5V
BVCER
IC=10mA, RBE=100Ω
45
BVCEO
IC=10mA
40
VCE(SAT) IC=1.6A, IB=160mA
VCE(SAT) IC=3.2A, IB=800mA
VBE(ON)
VCE=2.0V, IC=1.6A
hFE VCE=2.0V, IC=1.6A
20
hFE VCE=2.0V, IC=3.2A
4.0
fT VCE=2.0V, IC=100mA, f=4.0MHz (2N5783) 8.0
fT VCE=2.0V, IC=100mA, f=200kHz (2N5786) 1.0
hfe VCE=2.0V, IC=100mA, f=1.0kHz
25
ton VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5783)
ton VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5786)
toff VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5783)
toff VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5786)
MAX
10
1.0
10
1.0
100
10
1.0
2.0
1.5
150
UNITS
μA
mA
μA
mA
μA
μA
V
V
V
V
V
60 MHz
4.0 MHz
0.5 μs
5.0 μs
2.5 μs
15 μs
R1 (21-September 2011)

PagesPages 2
Télécharger [ 2N5783 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N5780 Trans GP BJT PNP 65V 3.5A 3-Pin TO-39 Box New Jersey Semiconductor
New Jersey Semiconductor
2N5781 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package Seme LAB
Seme LAB
2N5781 COMPLEMENTARY SILICON POWER TRANSISTOR Central Semiconductor
Central Semiconductor
2N5781 Silicon NPN & PNP Transistor RCA
RCA

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche