2N5667S Datasheet PDF - Microsemi Corporation
| Part Number | 2N5667S | |
| Description | NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 | |
| Manufacturers | Microsemi Corporation | |
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TECHNICAL DATA
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
Devices
2N5664 2N5665
Qualified Level
JAN
JANTX
JANTXV
Devices
2N5666 2N5667
2N5666S 2N5667S
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
1) Derate linearly 14.3 mW/0C for TA > +250C
2) Derate linearly 6.9 mW/0C for TA > +250C
3) Derate linearly 300 mW/0C for TC >+1000C
4) Derate linearly 150 mW/0C for TC > +1000C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
2N5664 2N5665
2N5666, S 2N5667, S Unit
200 300 Vdc
250 400 Vdc
6.0 Vdc
1.0 Adc
5.0 Adc
2N5664 2N5666, S
2N5665
2.5 (1)
30 (3)
2N5667, S
1.2 (2)
15 (4)
W
W
-65 to +200
0C
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N5664, 2N5666, S
2N5665, 2N5667, S
V(BR)CER
Emitter-Base Breakdown Voltage
IE = 10 µAdc
V(BR)EBO
Collector-Emitter Cutoff Current
VCE = 200 Vdc
2N5664, 2N5666, S
ICES
VCE = 300 Vdc
2N5665, 2N5667, S
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min.
250
400
6.0
TO-66* (TO-213AA)
2N5664, 2N5665
TO-5*
2N5666, 2N5667
TO-39* (TO-205AD)
2N5666S, 2N5667S
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
0.2 µAdc
0.2
120101
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N5667S electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2N5667S.PDF Datasheet ] | |
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