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PDF 2N5657 Data sheet ( Hoja de datos )

Número de pieza 2N5657
Descripción SILICON NPN TRANSISTOR
Fabricantes STMicroelectronics 
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2N5657
SILICON NPN TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
DESCRIPTION
The 2N5657 is a silicon epitaxial-base NPN
transistor in Jedec SOT-32 plastic package. It is
intended for use output amplifiers, low current,
high voltage converters and AC line relays.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
V EBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tc 25 oC
St orage Temperature
Max. Operating Junction Temperature
June 1997
Value
375
350
6
0.5
1
0.25
20
-65 to 150
150
Uni t
V
V
V
A
A
A
W
oC
oC
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2N5657 pdf
2N5657
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. ..
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