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PDF 2N5609 Data sheet ( Hoja de datos )
| Número de pieza | 2N5609 | |
| Descripción | Silicon PNP Transistors | |
| Fabricantes | ETC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5609 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Power Transistors
2N5609
Silicon PNP Transistors
Features
With TO-66 package
Designed for use as high-frequency drivers in audio amplifier
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RATING
80
80
5.0
5.0
25
150
-55~150
UNIT
V
V
V
A
A
W
Electrical Characteristics Tc=25
SYMBOL
ICBO
IEBO
ICEO
VCBO
V(BR)CEO
VEBO
VCEsat-1
VCEsat-2
VCEsat-3
VCEsat-4
hFE-1
hFE-2
hFE-3
hFE-4
VBE(sat)1
VBE(sat)2
VBE(sat)3
fT
tf
ts
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frequency at f = 1MHz
Fall time
Tum-off storage time
CONDITIONS
VCB =80V;IE=0
VEB =5V, IC=0
IC=10mA,IB=0
IC =1A; IB =0.1A
IC=2.5A,VCE=5V
IC=1A,VCE=2V
INCHANGE
TO-66
MIN MAX UNIT
10 A
10 A
80
0.5
V
V
70 200
1.0 V
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N5609.PDF ] | |
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