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BD9997FVT fiches techniques PDF

ROHM Semiconductor - Silicon monolithic integrated circuits

Numéro de référence BD9997FVT
Description Silicon monolithic integrated circuits
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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BD9997FVT fiche technique
Structure
Silicon monolithic integrated circuits
Product Name
Model Name
Boost DC/DC converter LSI for Blu-ray
BD9997FVT
Function
(1) The output voltage can be set by external resistance.
(2) Internal Power MOS transistor with Backgate Control function
(3) Inrush current reduction
(4) Integrated Soft start
(5) Built-in Protection function
NMOS overcurrent limit, overvoltage mute,
thermal shutdown, output ground short protection
(6) UVLO operation at low power-supply voltage
(7) Easy assembly small sized package TSSOP-B8
(8) Built-in Discharge function
(9) function of output interception(at shutdown, at overvoltage)
○Absolute maximum ratings (Ta=25℃)
Item
Symbol
Limit
Supply voltage
Vcc -0.3~7
Power dissipation (※1)
Pd 0.625
Operating temperature range
Topt -25~+85
Storage temperature range
Tstg -55~+150
Input voltage range on SW
VINSW
-0.3~15
Input voltage range on VOUT
VINOUT
-0.3~15
Input voltage range on FB
VINFB
-0.3~VCC+ 0.3
AMPOUT terminal maximum input voltage
VINAMPOUT
-0.3~VCC+ 0.3
XSHDN terminal maximum input voltage
Junction temperature
VINSHDN
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Tjmax
-0.3~VCC+ 0.3
+150
(※1) While mounted on Glass-expoxy board(ROHM standard board:70×70×1.6[mm3])
○Operating conditions (Ta=25℃)
Item
Symbol
Min. Typ.
Supply voltage
Vcc 4.5 5.0
Output current1 (※2)(※5)
Iout1
--
Output current2 (※3)(※5)
Iout2
--
Output current3 (※4)(※5)
Iout3
--
(※2) VIN=4.5[V] → VOUT=7.5[V] (L=22[uH]) (※3) VIN=4.5[V] → VOUT=11.0[V] (L=22[uH])
(※4) VIN=4.5[V] → VOUT=8.1[V] (L=10[uH]) (※5) Do not, however exceed Pd.
Max.
5.5
0.15
0.10
0.20
1/4
Unit
V
W
V
V
V
V
V
Unit
V
A
A
A
REV. B
Datasheet pdf - http://www.DataSheet4U.co.kr/

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