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PDF 2N5484 Data sheet ( Hoja de datos )
| Número de pieza | 2N5484 | |
| Descripción | N-Channel JFETs | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel JFETs
2N/SST5484 Series
Vishay Siliconix
PRODUCT SUMMARY
Part Number
2N/SST5484
2N/SST5485
2N/SST5486
VGS(off) (V)
–0.3 to –3
–0.5 to –4
–2 to –6
V(BR)GSS Min (V)
–25
–25
–25
gfs Min (mS)
3
3.5
4
IDSS Min (mA)
1
4
8
2N5484
2N5485
2N5486
SST5484
SST5485
SST5486
FEATURES
D Excellent High-Frequency Gain:
Gps 13 dB (typ) @ 400 MHz – 5485/6
D Very Low Noise: 2.5 dB (typ) @
400 MHz – 5485/6
D Very Low Distortion
D High AC/DC Switch Off-Isolation
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
TO-226AA
(TO-92)
D1
S2
G3
Top View
2N5484
2N5485
2N5486
For applications information see AN102 and AN105.
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
TO-236
(SOT-23
)
D1
S2
3G
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236
www.vishay.com
7-1
1 page  
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
10
VGS(off) = –2 V
VDS = 10 V
8
TA = –55_C
6 25_C
4 125_C
Transfer Characteristics
10
VGS(off) = –3 V
VDS = 10 V
8 TA = –55_C
25_C
6
125_C
4
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
VGS(off) = –2 V
VDS = 10 V
f = 1 kHz
8
TA = –55_C
6 25_C
4 125_C
2
0
0
–0.4
–0.8
–1.2
–1.6
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300
TA = 25_C
240
VGS(off) = –2 V
180
–3 V
120
–2
60
0
0.1 1
ID – Drain Current (mA)
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
10
2
0
0
–0.6
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
VGS(off) = –3 V
VDS = 10 V
f = 1 kHz
8
TA = –55_C
6 25_C
4 125_C
2
0
0
–0.6
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100
gfs RL
AV + 1 ) RLgos
80 Assume VDD = 15 V, VDS = 5 V
10 V
RL + ID
60
40
20
0
0.1
VGS(off) = –2 V
–3 V
1
ID – Drain Current (mA)
10
www.vishay.com
7-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N5484.PDF ] | |
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