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Numéro de référence | 2N5430 | ||
Description | MEDIUM POWER NPN SILICON TRANSISTOR | ||
Fabricant | Seme LAB | ||
Logo | |||
1 Page
SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
2N5430
6.35 (0.250)
8.64 (0.340)
MEDIUM POWER
NPN SILICON TRANSISTOR
Designed for switching and wide - band
amplifier applications
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
TO66 Package.
Pin 1
Base
Pin 2
Emitter
Case
Collector
This product is available screened in
accordance with various military specs.
EG. 2N5430CECC–QR–B
Built and screened in accordance with
CECC procedures.
Screened to sequence B.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO
VCBO
VEBO
IC
IB
PD
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current – Continuous
Base Current
Total Device Dissipation at Tcase = 25°C
Derate above 25°C
100 V
100 V
6V
7A
1A
40 W
228 mW / °C
Tj Operating and
Tstg Storage Junction Temperature Range
RqJC Thermal Resistance, Junction to Case.
–65 to 200°C
4.37 °C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 1/94
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Pages | Pages 2 | ||
Télécharger | [ 2N5430 ] |
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