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RJP1CS08DWT fiches techniques PDF

Renesas - IGBT

Numéro de référence RJP1CS08DWT
Description IGBT
Fabricant Renesas 
Logo Renesas 





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RJP1CS08DWT fiche technique
Preliminary Datasheet
RJP1CS08DWT/RJP1CS08DWA
1250V - 200A - IGBT
Application: Inverter
R07DS0831EJ0001
Rev.0.01
Jul 05, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
High speed switching
Short circuit withstands time (10 s min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP1CS08DWT-80
32
3
1
3
3
www.DataSheet.net/
Wafer: RJP1CS08DWA-80
Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC Note1
IC Note1
Tj
Notes: 1. This data is a regulated value in Package (at Tc = 25C).
Ratings
1250
±30
400
200
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0831EJ0001 Rev.0.01
Jul 05, 2012
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Datasheet pdf - http://www.DataSheet4U.co.kr/

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