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RJP1CS06DWT fiches techniques PDF

Renesas - IGBT

Numéro de référence RJP1CS06DWT
Description IGBT
Fabricant Renesas 
Logo Renesas 





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RJP1CS06DWT fiche technique
Preliminary Datasheet
RJP1CS06DWT/RJP1CS06DWA
Silicon N Channel IGBT
Application: Inverter
R07DS0829EJ0002
Rev.0.02
Jul 05, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C)
High speed switching
Short circuit withstands time (10 s min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP1CS06DWT-80
3
13
Wafer: RJP1CS06DWA-80
2
3
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Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC Note1
IC Note1
Tj
Notes: 1. This data is a regulated value in evaluation package.
Ratings
1250
±30
200
100
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0829EJ0002 Rev.0.02
Jul 05, 2012
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Datasheet pdf - http://www.DataSheet4U.co.kr/

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