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RJH60M5DPQ-A0 fiches techniques PDF

Renesas - IGBT

Numéro de référence RJH60M5DPQ-A0
Description IGBT
Fabricant Renesas 
Logo Renesas 





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RJH60M5DPQ-A0 fiche technique
Preliminary Datasheet
RJH60M5DPQ-A0
600 V - 37 A - IGBT
Application: Inverter
R07DS0536EJ0100
Rev.1.00
Sep 02, 2011
Features
Short circuit withstand time (8 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
75
37
150
30
120
200
0.63
2.1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0536EJ0100 Rev.1.00
Sep 02, 2011
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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