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PDF RJH60M1DPP-M0 Data sheet ( Hoja de datos )
| Número de pieza | RJH60M1DPP-M0 | |
| Descripción | IGBT | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RJH60M1DPP-M0 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Preliminary Datasheet
RJH60M1DPP-M0
600V - 8A - IGBT
Application: Inverter
R07DS0528EJ0300
Rev.3.00
May 25, 2012
Features
Short circuit withstand time (8 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (75 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load)
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
1
23
1. Gate
2. Collector
G 3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
16
8
20
8
32
30
4.1
7.2
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0528EJ0300 Rev.3.00
May 25, 2012
Page 1 of 9
1 page  
RJH60M1DPP-M0
Switching Characteristics (Typical) (1)
1000
tf
100
td(off)
td(on)
10 tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1 10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
VCC = 300 V, VGE = 15 V
IC = 8 A, Tc = 150°C
100
10
1
tf
td(off)
td(on)
tr
10 100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 8 A, Rg = 5 Ω
tf
100
td(off)
td(on)
tr
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
Eon
1
Eoff
0.1
1
10 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
1
Eoff
Eon
0.1
VCC = 300 V, VGE = 15 V
IC = 8 A, Tc = 150°C
0.01
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
1
VCC = 300 V, VGE = 15 V
IC = 8 A, Rg = 5 Ω
Eoff
0.1 Eon
0.01
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0528EJ0300 Rev.3.00
May 25, 2012
Page 5 of 9
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RJH60M1DPP-M0.PDF ] | |
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