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Numéro de référence | RJH1CF5RDPQ-80 | ||
Description | High Speed Power Switching | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
RJH1CF5RDPQ-80
Silicon N Channel IGBT
High Speed Power Switching
Features
• Voltage resonance circuit use
• Reverse conducting IGBT with monolithic body diode
• High efficiency device for induction heating
• Low collector to emitter saturation voltage
VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 25°C)
• Gate to emitter voltage rating ±30 V
• Pb-free lead plating
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
4
123
G
www.DataSheet.net/
Preliminary Datasheet
R07DS0355EJ0100
Rev.1.00
May 12, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF
PC
θj-c
Tj
Tstg
Ratings
1200
±30
50
25
100
16
192.3
0.65
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0355EJ0100 Rev.1.00
May 12, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Pages | Pages 7 | ||
Télécharger | [ RJH1CF5RDPQ-80 ] |
No | Description détaillée | Fabricant |
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