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RJH1CF5RDPQ-80 fiches techniques PDF

Renesas - High Speed Power Switching

Numéro de référence RJH1CF5RDPQ-80
Description High Speed Power Switching
Fabricant Renesas 
Logo Renesas 





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RJH1CF5RDPQ-80 fiche technique
RJH1CF5RDPQ-80
Silicon N Channel IGBT
High Speed Power Switching
Features
Voltage resonance circuit use
Reverse conducting IGBT with monolithic body diode
High efficiency device for induction heating
Low collector to emitter saturation voltage
VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 25°C)
Gate to emitter voltage rating ±30 V
Pb-free lead plating
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
4
123
G
www.DataSheet.net/
Preliminary Datasheet
R07DS0355EJ0100
Rev.1.00
May 12, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF
PC
θj-c
Tj
Tstg
Ratings
1200
±30
50
25
100
16
192.3
0.65
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0355EJ0100 Rev.1.00
May 12, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/

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