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PDF RJH6087BDPK Data sheet ( Hoja de datos )

Número de pieza RJH6087BDPK
Descripción High Speed Power Switching
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJH6087BDPK Hoja de datos, Descripción, Manual

Preliminary Datasheet
RJH6087BDPK
Silicon N Channel IGBT
High Speed Power Switching
R07DS0389EJ0100
Rev.1.00
May 11, 2011
Features
Ultra high speed switching
tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load)
Low on-state voltage
Fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
G
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
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Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES
VGES
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width limited by maximum junction temperature.
Ratings
600
±30
50
100
100
223.2
0.56
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C / W
°C
°C
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 page




RJH6087BDPK pdf
RJH6087BDPK
Switching Characteristics (Typical) (1)
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tj = 25°C, Inductive load
100
10
1
td(off)
tf
td(on)
tr
10 100
Collector Current IC (A)
Switching Characteristics (Typical) (3)
1000
VCC = 300 V, VGE = 15 V
IC = 50 A, Tj = 25°C, Inductive load
td(off)
100 tf
tr td(on)
10
1 10 100
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 50 A, Rg = 5 Ω, Inductive load
td(off)
100
tf
tr
td(on)
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
Preliminary
Switching Characteristics (Typical) (2)
10000
1000
100 Eoff
10 Eon
1
0.1
1
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tj = 25°C, Inductive load
10 100
Collector Current IC (A)
Switching Characteristics (Typical) (4)
10000
1000
100
Eoff
Eon
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VCC = 300 V, VGE = 15 V
IC = 50 A, Tj = 25°C, Inductive load
10
1 10 100
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (6)
10000
1000
100
Eoff
Eon
VCC = 300 V, VGE = 15 V
IC = 50 A, Rg = 5 Ω, Inductive load
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 5 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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