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RJH60F7DPQ-A0 fiches techniques PDF

Renesas - High Speed Power Switching

Numéro de référence RJH60F7DPQ-A0
Description High Speed Power Switching
Fabricant Renesas 
Logo Renesas 





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RJH60F7DPQ-A0 fiche technique
Preliminary Datasheet
RJH60F7DPQ-A0
0B
600 V - 50 A - IGBT
High Speed Power Switching
R07DS0328EJ0200
Rev.2.00
Jul 22, 2011
Features
1B
Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
2B
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
Absolute Maximum Ratings
3B
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-cd
Tj
Tstg
Ratings
600
±30
90
50
180
100
328.9
0.38
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
4B
R07DS0328EJ0200 Rev.2.00
Jul 22, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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