DataSheetWiki


RJH60F3DPK fiches techniques PDF

Renesas - High Speed Power Switching

Numéro de référence RJH60F3DPK
Description High Speed Power Switching
Fabricant Renesas 
Logo Renesas 





1 Page

No Preview Available !





RJH60F3DPK fiche technique
Preliminary Datasheet
RJH60F3DPK
Silicon N Channel IGBT
High Speed Power Switching
R07DS0199EJ0200
Rev.2.00
Dec 01, 2010
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
1
23
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
www.DataSheet.net/
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-c
Tj
Tstg
Ratings
600
±30
40
20
80
80
178.5
0.7
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0199EJ0200 Rev.2.00
Dec 01, 2010
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

PagesPages 8
Télécharger [ RJH60F3DPK ]


Fiche technique recommandé

No Description détaillée Fabricant
RJH60F3DPK High Speed Power Switching Renesas
Renesas
RJH60F3DPQ-A0 High Speed Power Switching Renesas
Renesas

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche