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PDF W25Q16CV Data sheet ( Hoja de datos )

Número de pieza W25Q16CV
Descripción 3V 16M-BIT SERIAL FLASH MEMORY
Fabricantes Winbond 
Logotipo Winbond Logotipo



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No Preview Available ! W25Q16CV Hoja de datos, Descripción, Manual

W25Q16CV
3V 16M-BIT
SERIAL FLASH MEMORY WITH
DUAL AND QUAD SPI
www.DataSheet.net/
-1-
Publication Release Date: April 01, 2011
Revision C
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 page




W25Q16CV pdf
W25Q16CV
1. GENERAL DESCRIPTION
The W25Q16CV (16M-bit) Serial Flash memory provides a storage solution for systems with limited
space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash
devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP)
and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current
consumption as low as 4mA active and 1µA for power-down.
The W25Q16CV array is organized into 8,192 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128
(32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q16CV
has 512 erasable sectors and 32 erasable blocks respectively. The small 4KB sectors allow for greater
flexibility in applications that require data and parameter storage. (See figure 2.)
The W25Q16CV supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when
using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard
Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient
memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true XIP
(execute in place) operation.
A Hold pin, Write Protect pin and programmable write protection, with top or bottom array control,
provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and
device identification with a 64-bit Unique Serial Number.
2. FEATURES
Family of SpiFlash Memories
– W25Q16CV: 16M-bit / 2M-byte (2,097,152)
– 256-byte per programmable page
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
Highest Performance Serial Flash
– 104MHz Dual SPI / Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 52MB/S continuous data transfer rate
– Up to 8X that of ordinary Serial Flash
– More than 100,000 erase/program cycles(1)
– More than 20-year data retention
Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read with 8/16/32/64-Byte Wrap
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
www.DataSheet.net/ 4mA active current, <1µA Power-down (typ.)
– -40°C to +85°C operating range
Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4/32/64K-bytes)
– Program one to 256 bytes
– Erase/Program Suspend & Resume
Advanced Security & Identification Features
– Software and Hardware Write-Protect
– Top/Bottom, 4KB complement array protection
– Power Supply Lock-Down and OTP protection
– 64-Bit Unique ID for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Byte Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
Space Efficient Packaging
– 8-pin SOIC 150(2)/208-mil
– 8-pad WSON 6x5-mm
– 8-pin PDIP 300-mil(2)
– 16-pin SOIC 300-mil(2)
– 24-ball TFBGA 8x6-mm
– Contact Winbond for KGD and other options
Note 1. More than 100,000 Block Erase/Program cycles for Industrial and Automotive temperature; more than
10,000 full chip Erase/Program cycles tested in compliance with AEC-Q100.
2. These are special order packages, please contact Winbond for ordering information.
Publication Release Date: April 01, 2011
- 5 - Revision C
Datasheet pdf - http://www.DataSheet4U.co.kr/

5 Page





W25Q16CV arduino
5. BLOCK DIAGRAM
W25Q16CV
SFDP Register
000000h
0000FFh
Block Segmentation
xxFF00h
xxF000h
Sector 15 (4KB)
xxFFFFh
xxF0FFh
xxEF00h
• Sector 14 (4KB)
xxE000h
xxEFFFh
xxE0FFh
xxDF00h
xxD000h
Sector 13 (4KB)
xxDFFFh
xxD0FFh
Security Register 1 - 3
003000h
002000h
001000h
0030FFh
0020FFh
0010FFh
1FFF00h
• Block 31 (64KB)
1F0000h
1FFFFFh
1F00FFh
/WP (IO2)
/HOLD (IO3)
CLK
/CS
DI (IO0)
DO (IO1)
xx2F00h
xx2000h
xx1F00h
xx1000h
xx0F00h
xx0000h
Sector 2 (4KB)
Sector 1 (4KB)
Sector 0 (4KB)
xx2FFFh
xx20FFh
xx1FFFh
xx10FFh
xx0FFFh
xx00FFh
Write Control
Logic
www.DataSheet.net/
Status
Register
SPI
Command &
Control Logic
High Voltage
Generators
Page Address
Latch / Counter
Data
10FF00h
• Block 16 (64KB)
100000h
0FFF00h
• Block 15 (64KB)
0F0000h
08FF00h
080000h
Block 8 (64KB)
07FF00h
070000h
Block 7 (64KB)
00FF00h
000000h
Block 0 (64KB)
10FFFFh
1000FFh
0FFFFFh
0F00FFh
08FFFFh
0800FFh
07FFFFh
0700FFh
00FFFFh
0000FFh
Beginning
Page Address
Ending
Page Address
Column Decode
And 256-Byte Page Buffer
Byte Address
Latch / Counter
Figure 2. W25Q16CV Serial Flash Memory Block Diagram
- 11 -
Publication Release Date: April 01, 2011
Revision C
Datasheet pdf - http://www.DataSheet4U.co.kr/

11 Page







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