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CGH40035F fiches techniques PDF

CREE - RF Power GaN HEMT

Numéro de référence CGH40035F
Description RF Power GaN HEMT
Fabricant CREE 
Logo CREE 





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CGH40035F fiche technique
CGH40035F
35 W, RF Power GaN HEMT
Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40035F, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40035F ideal for linear
and compressed amplifier circuits. The transistor is available in a
screw-down, flange package.
PackagPeNT:yCpGe:H4404003159F3
FEATURES
APPLICATIONS
• Up to 4 GHz Operation
• 15 dB Small Signal Gain at 2.0 GHz
• 13 dB Small Signal Gain at 4.0 GHz
• 45 W typical PSAT
• 60 % Efficiency at PSAT
• 28 V Operation
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentationwww.DataSheet.net/
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

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