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PDF HMC998 Data sheet ( Hoja de datos )
| Número de pieza | HMC998 | |
| Descripción | GaAs pHEMT MMIC | |
| Fabricantes | Hittite | |
| Logotipo |  |
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Typical Applications
The HMC998 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
v01.0811
HMC998
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Features
High P1dB Output Power: +31 dBm
High Psat Output Power: +33 dBm
High Gain: 12 dB
High Output IP3: +41 dBm
Supply Voltage: Vdd = +10V to +15V @ 500 mA
50 Ohm Matched Input/Output
Die Size: 2.99 x 1.84 x 0.1 mm
General Description
The HMC998 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 22 GHz. The amplifier provides 12 dB of gain,
+41 dBm output IP3 and +31 dBm of output power at
1 dB gain compression while requiring 500 mA from
a +15V supply. This versatile PA exhibits a positive
gain slope from 1 to 18 GHz making it ideal for EW,
ECM, Radar and test equipment applications. The
HMC998www.DataSheet.net/ amplifier I/Os are internally matched to
50 Ohms facilitating integration into mutli-chip-
modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +15V, Vgg2 = +9.5V, Idd = 500 mA*
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range
0.1 - 2
2 - 18
18 - 22
Gain
9.5 11.5
10.5
12.5
10.5
12.5
Gain Flatness
±0.1 ±0.7 ±0.6
Gain Variation Over Temperature 0.006 0.11 0.016
Input Return Loss
-20 -20 -15
Output Return Loss
-7 -20 -20
Output Power for 1 dB Compression (P1dB)
29
31
29 31.5
27 30
Saturated Output Power (Psat)
33 33.5 33
Output Third Order Intercept (IP3)
41
41
40
Noise Figure
10 4
5
Supply Current
(Idd) (Vdd= 15V, Vgg1= -0.7V Typ.)
500
500
500
* Adjust Vgg1 between -2 to 0V to achieve Idd = 500mA typical.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
v01.0811
HMC998
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Second Harmonics vs.
Vdd @ Pout = 18 dBm
70
60
50
+12V
+14V
+15V
40
30
20
10
0
0 4 8 12 16 20 24
FREQUENCY(GHz)
Second Harmonics vs. Pout
70
60
50
40
30
20
10
0
0 4 8 12 16
FREQUENCY(GHz)
+12 dBm
+14 dBm
+16 dBm
+18 dBm
+20 dBm
+22 dBm
20 24
Reverse Isolation vs Temperature
0
-10 +25C
+85C
-20 -55C
-30
-40
www.DataSheet.net/
-50
-60
-70
-80
0 4 8 12 16 20
FREQUENCY (GHz)
24
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
+17 Vdc
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
Vgg2 = (Vdd - 6.5V) to (Vdd-4.5V)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 129 mW/°C above 85
°C)
Thermal Resistance
(channel to die bottom)
Output Power into VSWR >7:1
Storage Temperature
Operating Temperature
+27 dBm
150 °C
8.4 W
7.73 °C/W
+32 dBm
-65 to 150°C
-55 to 85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+12
+14
+15
Idd (mA)
500
500
500
Vgg1 adjust to achieve Idd = 500 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC998.PDF ] | |
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