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PDF 2N5294 Data sheet ( Hoja de datos )
| Número de pieza | 2N5294 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor Corp | |
| Logotipo |  |
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2N5294
2N5296
2N5298
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5294, 2N5296,
and 2N5298 types are NPN silicon transistors
manufactured by the epitaxial base process, and
designed for applications that require power amplifier
and medium speed switching capabilities.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage (RBE=100Ω)
Collector-Emitter Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEV
VCER
VCEO
IC
IB
PD
TJ, Tstg
ΘJA
ΘJC
2N5294
80
80
75
70
2N5296
60
60
50
40
4.0
2.0
36
-65 to +150
70
3.47
2N5298
80
80
70
60
UNITS
V
V
V
V
A
A
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5294
2N5296
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICEV
VCE=35V, VEB=1.5V
--
- 2.0
ICEV
VCE=35V, VEB=1.5V, TC=150°C -
-
- 5.0
ICEV
VCE=65V, VEB=1.5V
- 0.5
--
ICEV
VCE=65V, VEB=1.5V, TC=150°C - 3.0
--
ICER
VCE=50V, RBE=100Ω
- 0.5
--
ICER
VCE=50V, RBE=100Ω, TC=150°C - 2.0
--
IEBO
VEB=7.0V
- 1.0
--
IEBO
VEB=5.0V
--
- 1.0
BVCEV
VBE=1.5V, IC=100mA
80 -
60 -
BVCER
IC=100mA, RBE=100Ω
75 -
50 -
BVCEO
IC=100mA
70 -
40 -
VCE(SAT) IC=500mA, IB=50mA
- 1.0
--
VCE(SAT) IC=1.0A, IB=100mA
--
- 1.0
VCE(SAT) IC=1.5A, IB=150mA
--
--
VBE(ON)
VCE=4.0V, IC=500mA
- 1.1
--
VBE(ON)
VCE=4.0V, IC=1.0A
--
- 1.3
VBE(ON)
VCE=4.0V, IC=1.5A
--
--
2N5298
MIN MAX
--
--
- 0.5
- 3.0
- 0.5
- 2.0
--
- 1.0
80 -
70 -
60 -
--
--
- 1.0
--
--
- 1.5
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
R1 (26-September 2012)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5294.PDF ] | |
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