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PDF TGC4703-FC Data sheet ( Hoja de datos )
| Número de pieza | TGC4703-FC | |
| Descripción | 19 - 38 GHz Doubler | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TGC4703-FC
19 to 38 GHz Doubler
Measured Performance
Bias conditions: Vd = 3.5 V, Vg1 = -0.4 V, Vg2 = +0.2 V,
Idq = 65 mA Typical
Key Features
• RF Output Frequency Range: 38 – 38.5 GHz
• Input Frequency Range: 19 – 19.25 GHz
• 14 dBm saturated Output Power
• 8 dB nominal Conversion Gain
• 30 dB input Frequency Isolation at output
• Input Return Loss > 15 dB
• Output Return Loss > 8 dB
• Bias: Vd = 3.5 V, Idq = 65mA, Vg1 = -0.4 V,
Vg2 = +0.2 V Typical
• Technology: 0.13 um pHEMT with front-side
Cu/Sn pillars
• Chip Dimensions: 1.16 x 2.85 x 0.38 mm
16
15
14
13
12
11
10
9
8 Input Freq: 19.25 GHz
7
6
-6 -4 -2 0 2 4 6 8 10 12
Input Power (dBm)
50
Output @ Fund Freq
-
40 +10 dBm Input @ Fund
Freq
30
Output @ 2x Fund Freq
( Fund Freq:+10 dBm at
Input)
25
20
15
20 10
10 5
Fundamental
2x Fundamental
00
14 19 24 29 34 39 44 49
Frequency (GHz)
Primary Applications
• Automotive Radar
• E-Band Communication
www.DataSheet.net/
Product Description
The TriQuint TGC4703-FC is a flip-chip frequency
doubler. It combines an input and output buffer
amplifier and a frequency doubler for use in
automotive radar. The TGC4703-FC is designed
using TriQuint’s proven 0.13 µm pHEMT process
and front-side Cu / Sn pillar technology for
simplified assembly and low interconnect
inductance. Die reliability is enhanced by using
TriQuint’s BCB polymeric passivation process.
The TGC4703-FC typically provides 14 dBm
saturated output power with 8 dB conversion gain.
Lead-free and RoHS compliant.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2009 © Rev A
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
TGC4703-FC
Measured Data on Flipped Die on Carrier Board
Bias conditions: Vd = 3.5 V, Idq = 65 mA, Vg1 = -0.4 V Vg2 = +0.2 V Typical
16
15
14
13
12
11
10
9
8 Input Freq: 19.25 GHz
7
6
-6 -4 -2 0 2 4 6 8 10 12
Input Power (dBm)
www.DataSheet.net/
50
40
30
20
Output @ Fund Freq
10
-
+10 dBm Input @
Fund Freq
0
14 16 18 20
Frequency (GHz)
22
24
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2009 © Rev A
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
Assembly Notes
TGC4703-FC
Component placement and die attach assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• Cu pillars on die are 65 um tall with a 22 um tall Sn solder cap.
• Recommended board metallization is evaporated TiW followed by nickel/gold at pillar attach interface. Ni is the adhesion layer for
the solder and the gold keeps the Ni from oxidizing. The Au should be kept to a minimum to avoid embrittlement; suggested Au /
Sn mass ratio must not exceed 8%.
• Au metallization is not recommended on traces due to solder wicking and consumption concerns. If Au traces are used, a physical
solder barrier must be applied or designed into the pad area of the board. The barrier must be sufficient to keep the solder from
undercutting the barrier.
Reflow process assembly notes:
• Minimum alloying temperatures 245 0C.
• Repeating reflow cycles is not recommended due to Sn consumption on the first reflow cycle.
• An alloy station or conveyor furnace with an inert atmosphere such as N2 should be used.
• Dip copper pillars in “no-clean flip chip” flux prior to solder attach. Suggest using a high temperature flux. Avoid exposing entire
die to flux.
• If screen printing flux, use small apertures and minimize volume of flux applied.
• Coefficient of thermal expansion matching between the MMIC and the substrate/board is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
• Suggested reflow will depend on board material and density.
www.DataSheet.net/
Typical Reflow Profiles for TriQuint Cu / Sn Pillars
Process
Ramp-up Rate
Flux Activation Time and Temperature
Time above Melting Point (245 0C)
Max Peak Temperature
Time within 5 0C of Peak Temperature
Ramp-down Rate
Sn Reflow
3 0C/sec
60 – 120 sec @ 140 – 160 0C
60 – 150 sec
300 0C
10 – 20 sec
4 – 6 0C/sec
Ordering Information
Part
TGC4703-FC
Package Style
GaAs MMIC Die
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2009 © Rev A
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
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| PDF Descargar | [ Datasheet TGC4703-FC.PDF ] | |
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