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PDF TGF2961-SD Data sheet ( Hoja de datos )
| Número de pieza | TGF2961-SD | |
| Descripción | 1 Watt GaAs HFET | |
| Fabricantes | TriQuint Semiconductor | |
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TGF2961-SD
1 Watt DC-4 GHz Packaged HFET
900 MHz Application Board
Performance
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
Key Features
• Frequency Range: DC-4 GHz
•NomTinOaIl:94040dMBHmz Application Board Performance:
• 31 dBm Psat, 30 dBm P1dB
••
Gain: 18 dB
Input Return Loss: -15 dB
•
•
Output Return Loss: -7 dB
Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V
•
(Typical)
Package Dimensions: 4.5 x 4 x 1.5 mm
Primary Applications
• Cellular Base Stations
• WiMAX
• Wireless Infrastructure
• IF & LO Buffer Applications
• RFID
www.DataSheet.net/
Product Description
The TGF2961-SD is a high performance 1-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The device’s ideal operating point is at a drain bias
of 8 V and 200 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 18 dB of gain, 30 dBm of
saturated output power, and 44 dBm of output IP3
Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.
RoHS and Lead-Free compliant
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2012 © Rev C
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
TGF2961-SD
Table IV
Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Thermal Resistance, θjc
Thermal Resistance, θjc
Under RF Drive
Mounting Temperature
Storage Temperature
Test Conditions
Tbaseplate = 70°C
Value
Pd = 2.7 W
Tchannel = 175°C
Tm = 8.7E+06 Hrs
Vd = 8 V
θjc = 39 (°C/W)
Id = 200 mA
Tchannel = 147°C
Pd = 1.6 W
Tm = 1.86E+08 Hrs
Tbaseplate = 85°C
Vd = 8 V
θjc = 39 (°C/W)
Id = 260 mA
Tchannel = 127°C
Pout = 30 dBm
Tm = 2.27E+09 Hrs
Pd = 1.08 W
Tbaseplate = 85°C
See ‘Typical Solder Reflow Profiles’ Table
-65 to 150°C
Notes
1/ 2/
www.DataSheet.net/
1/ For a median life of 8.7E6 hours, Power Dissipation is limited to
Pd(max) = (175°C – Tbase°C) / θjc
2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
Power De-Rating Curve
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2012 © Rev C
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
TGF2961-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
www.DataSheet.net/
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2012 © Rev C
11
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet TGF2961-SD.PDF ] | |
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