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Número de pieza | TGF2960-SD | |
Descripción | 0.5 Watt GaAs HFET | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TGF2960-SD (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
No Preview Available ! TGF2960-SD
0.5 Watt DC-5 GHz Packaged HFET
900 MHz Application Board
Performance
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
Key Features
• Frequency Range: DC-5 GHz
•NomTinOaIl:94000dMBHmz Application Board Performance:
• 28 dBm Psat, 27 dBm P1dB
••
Gain: 19 dB
Input Return Loss: -10 dB
•
•
Output Return Loss: -5 dB
Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V
•
(Typical)
Package Dimensions: 4.5 x 4 x 1.5 mm
Primary Applications
• Cellular Base Stations
• WiMAX
• Wireless Infrastructure
• IF & LO Buffer Applications
• RFID
www.DataSheet.net/
Product Description
The TGF2960-SD is a high performance 1/2-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The device’s ideal operating point is at a drain bias
of 8 V and 100 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 19 dB of gain, 28 dBm of
saturated output power, and 40 dBm of output IP3.
Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.
RoHS and Lead-Free compliant.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2012 © Rev B
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page TGF2960-SD
Table IV
Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Thermal Resistance, θjc
Thermal Resistance, θjc
at Psat
Mounting Temperature
Storage Temperature
Test Conditions
Tbaseplate = 70°C
Value
Pd = 1.37 W
Tchannel = 175°C
Tm = 8.77E+06 Hrs
Vd = 8 V
θjc = 77 (°C/W)
Id = 100 mA
Tchannel = 146.5°C
Pd = 0.8 W
Tm = 2.06E+08 Hrs
Tbaseplate = 85°C
Vd = 8 V
θjc = 77 (°C/W)
Id =130 mA
Tchannel = 126°C
Pout = 27 dBm
Tm = 2.48E+09 Hrs
Pd = 0.54 W
Tbaseplate = 85°C
See ‘Typical Solder Reflow Profiles’ Table
-65 to 150°C
www.DataSheet.net/
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2012 © Rev B
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page TGF2960-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
www.DataSheet.net/
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2012 © Rev B
11
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page |
Páginas | Total 21 Páginas | |
PDF Descargar | [ Datasheet TGF2960-SD.PDF ] |
Número de pieza | Descripción | Fabricantes |
TGF2960-SD | 0.5 Watt GaAs HFET | TriQuint Semiconductor |
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