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PDF T1G6003028-FS Data sheet ( Hoja de datos )
| Número de pieza | T1G6003028-FS | |
| Descripción | DC-6GHz GaN RF Power Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio
communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 6 GHz
• Output Power (P3dB): 30 W at 6 GHz
• Linear Gain: >14 dB at 6 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
Functional Block Diagram
1
www.DataSheet.net/
2
General Description
The TriQuint T1G6003028-FS is a 30 W (P3dB)
discrete GaN on SiC HEMT which operates
from DC to 6 GHz. The device is constructed
with TriQuint’s proven 0.25 µm process, which
features advanced field plate techniques to
optimize power and efficiency at high drain
bias operating conditions. This optimization
can potentially lower system costs in terms of
fewer amplifier line-ups and lower thermal
management costs.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pin Configuration
Pin #
1
2
Flange
Symbol
Vd/RF OUT
Vg/RF IN
Source
Ordering Information
Material No. Part No.
1080206
T1G6003028-FS
1093989
T1G6003028-FS-
EVB1
Description
Packaged part:
Flangeless
5.4-5.9 GHz
Eval. Board
ECCN
EAR99
EAR99
Data Sheet: Rev A 05/23/2012
© 2012 TriQuint Semiconductor, Inc.
- 1 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
Typical Performance (cont.)
Performance is measured at DUT reference plane
T1G6003028-FS Gain DEff. and PAE vs. Pout
1000MHz, 100us 20%, Vds = 28V Idq = 200mA
26
25 ZS = 3.92 + j1.97 Ω
ZL = 7.67 + j5.39 Ω
24
80
70
60
23 50
22 40
21 30
20
Gain
DEff.
20
19 PAE 10
1830 32 34 36 38 40 42 44 460
Pout [dBm]
T1G6003028-FS Gain DEff. and PAE vs. Pout
2000MHz, 100µs 20%, VDS = 28V IDQ = 200mA
23 80
22 ZS = 2.03 - j2.16 Ω
21 ZL = 6.30 + j2.80 Ω
70
60
20 50
19 40
18 30
17
Gain
DEff.
20
16 PAE 10
1530 32 34 36 38 40 42 44 460
Pout [dBm]
T1G6003028-FS Gain DEff. and PAE vs. Pout
3000MHz, 100µs 20%, VDS = 28V IDQ = 200mA
18 80
17 ZS = 3.92 - j6.85 Ω
16 ZL = 5.78 - j2.51 Ω
70
60
15 50
14 40
13 30
12
Gain
DEff.
20
11 PAE 10
1030 32 34 36 38 40 42 44 460
Pout [dBm]
T1G6003028-FS Gain DEff. and PAE vs. Pout
4000MHz, 100µs 20%, VDS = 28V IDQ = 200mA
17 80
16 ZS = 6.37 - j13.01 Ω
15 ZL = 4.99 - j4.31 Ω
70
60
14 50
13
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12
11
10
Gain
DEff.
PAE
40
30
20
10
932 34 36 38 40 42 44 46 480
Pout [dBm]
T1G6003028-FS Gain DEff. and PAE vs. Pout
5000MHz, 100µs 20%, VDS = 28V IDQ = 200mA
17 80
16 ZS = 18.23 - j11.79 Ω
15 ZL = 7.11 - j7.54 Ω
70
60
14 50
13 40
12 30
11
Gain
DEff.
20
10 PAE 10
930 32 34 36 38 40 42 44 460
Pout [dBm]
T1G6003028-FS Gain DEff. and PAE vs. Pout
6000MHz, 100µs 20%, VDS = 28V IDQ = 200mA
18 80
17 ZS = 11.89 - j0.35 Ω
16 ZL = 6.31 - j12.07 Ω
70
60
15 50
14 40
13 30
12
Gain
DEff.
20
11 PAE 10
1030 32 34 36 38 40 42 44 460
Pout [dBm]
Data Sheet: Rev A 05/23/2012
© 2012 TriQuint Semiconductor, Inc.
- 5 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
Mechanical Information
Package Information and Dimensions
All dimensions are in millimeters.
www.DataSheet.net/
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both
lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering
processes.
Data Sheet: Rev A 05/23/2012
© 2012 TriQuint Semiconductor, Inc.
- 11 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet T1G6003028-FS.PDF ] | |
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