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PDF TK8A50D Data sheet ( Hoja de datos )
| Número de pieza | TK8A50D | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TK8A50D (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TK8A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK8A50D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
±30
8
32
40
165
8
4.0
www.DataSheet.net/
150
-55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.4 mH, RG = 25 Ω, IAR = 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1
2008-09-16
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
TK8A50D
rth – tw
10
1 Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10 μ
100 μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.125°C/W
1m
10 m
100 m
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (pulsed) *
10 ID max (continuous) *
100 μs *
1 ms *
DC operation
1 Tc = 25°C
0.1
0.01
*: SINGLE NONREPETITIVE
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.001
1 10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
200
160
120
www.DataSheet.net/
80
40
0
25
50
75 100 125 150
CHANNEL TEMPEATURE (INITIAL)
Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 4.4 mH
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5
2008-09-16
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TK8A50D.PDF ] | |
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