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PDF TGP1439 Data sheet ( Hoja de datos )
| Número de pieza | TGP1439 | |
| Descripción | Phase Shifter | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Product Data Sheet
August 5, 2008
18 - 20 GHz 5-Bit Phase Shifter
TGP1439
The TriQuint TGP1439 is a 5-Bit Digital Phase
Shifter MMIC design using TriQuint’s proven 0.5 µm
Power pHEMT process to support a variety of K-Band
phased array applications including satellite
communication systems.
Key Features and Performance
• 0.5um pHEMT Technology
• 18-20 GHz Frequency Range
• 3º Typical RMS Phase Shift Error
• -5 dB Typical Insertion Loss
• Control Voltage: -2.5 V to -5.0 V
• Compact 1.27 mm2 Die Area
Primary Applications
• Phased Arrays
• Satellite Communication Systems
The 5-bit design utilizes a compact topology that
achieves a 1.27 mm2 die area, high performance and
good tolerance to control voltage variation
The TGP1439 provides a 5-Bit digital phase shift
function with a nominal -5 dB insertion loss and 3º
RMS phase shift error over a bandwidth of 18-20 GHz.
The TGP1439 requires a minimum of off-chip
components and operates with a -5.0 V to -2.5 V
control voltage range. Each device is RF tested on-
wafer to ensure performance compliance. The device
is available in chip form.
TGP1439 Typical RF Performance (Fixtured)
-3
-4 Insertion Loss
40
35
-5 30
-6 25
-7 20
-8 15
-9 10
-10 5
-11 0
-12
Phase Error
-5
-13 -10
17 18 19 20 21
Frequency (GHz)
Note: Datasheet is subject to change without notice.
TGP1439 Typical RF Performance (Fixtured)
12
9
6
www.DataSheet.net/
3
0
-3
-6
-9
-12
0
18 GHz
19 GHz
20 GHz
48
12 16 20 24 28
Phase State
TGP1439 Typical RF Performance (Fixtured)
0
-2
Input
Output
-4
-6
-8
-10
-12
-14
-16
-18
-20
17 18 19 20 21
Frequency (GHz)
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Recommend 500Ω
series resistance
on the control lines
Product Data Sheet
TGP1439
Chip Assembly and Bonding Diagram
Reflow process assembly notes:
www.DataSheet.net/
•= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
•= alloy station or conveyor furnace with reducing atmosphere
•= no fluxes should be utilized
•= coefficient of thermal expansion matching is critical for long-term reliability
•= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
•= vacuum pencils and/or vacuum collets preferred method of pick up
•= avoidance of air bridges during placement
•= force impact critical during auto placement
•= organic attachment can be used in low-power applications
•= curing should be done in a convection oven; proper exhaust is a safety concern
•= microwave or radiant curing should not be used because of differential heating
•= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
•= thermosonic ball bonding is the preferred interconnect technique
•= force, time, and ultrasonics are critical parameters
•= aluminum wire should not be used
•= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
•= maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
5
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| Páginas | Total 5 Páginas | |
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