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PDF IRF7313QPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7313QPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7313QPBF (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N- Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
PD - 96125
IRF7313QPbF
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = 30V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.029Ω
Top View
www.DataSheet.net/
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
30
± 20
6.5
5.2
30
2.5
2.0
1.3
82
Avalanche Current
IAR 4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
EAR
dv/dt
0.20
5.8
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
www.irf.com
Symbol
RθJA
Limit
62.5
Units
°C/W
1
09/04/07
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
IRF7313QPbF
1200
900
600
300
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
Coss
Crss
20 ID = 5.8A
16
12
8
4
VDS = 15V
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
0
0 10 20 30 40
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
www.DataSheet.net/
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF7313QPBF.PDF ] | |
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